 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Composite Transistors XN04609 (XN4609) Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) For amplification of low frequency output (Tr1) For general amplification (Tr2) 2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 4 5 6 1.50+0.25 -0.05 2.8+0.2 -0.3 Unit: mm 0.16+0.10 -0.06 I Features G G 0.30+0.10 -0.05 0.50+0.10 -0.05 10 1.1+0.2 -0.1 I Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25C) Ratings 25 20 12 0.5 1 -60 -50 -7 -100 -200 300 150 -55 to +150 Unit V V V A A V V V mA mA mW C C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini6-G1 Package Marking Symbol: 5F Internal Connection 6 5 4 Tr1 1 2 3 Tr2 Note) The Part number in the Parenthesis shows conventional part number. 0 to 0.1 G 2SD1328 + 2SB0709A(2SB709A) 1.1+0.3 -0.1 I Basic Part Number of Element (0.65) Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 3 2 1 0.40.2 5 1 Composite Transistors XN04609 (Ta=25C) Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*2 Conditions IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCB = 25V, IE = 0 VCE = 2V, IC = 0.5A*1 VCE = 2V, IC = 1A*1 IC = 0.5A, IB = 20mA IC = 0.5A, IB = 20mA VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 200 10 1.0 200 60 0.13 0.4 1.2 V V MHz pF min 25 20 12 0.1 800 typ max Unit V V V A I Electrical Characteristics G Tr1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON Resistance G Tr2 Parameter Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCB = -20V, IE = 0 VCE = -10V, IE = 0 VCE = -10V, IC = -2mA IC = -100mA, IB = -10mA VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz 160 - 0.3 80 2.7 min -60 -50 -7 - 0.1 -100 460 V MHz pF typ max Unit V V V A A Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *1 *2 Pulse measurement Ron test circuit IB=1mA f=1kHz V=0.3V 1k VB VV VA Ron= VB 1000() VA-VB 2 Composite Transistors Common characteristics chart PT -- Ta 500 XN04609 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of Tr1 IC -- VCE 1.2 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=25 100 VBE(sat) -- IC IC/IB=10 Base to emitter saturation voltage VBE(sat) (V) 1.0 IB=4.0mA 3.5mA 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 -25C Ta=75C 25C 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C Collector current IC (A) 0.8 3.0mA 2.5mA 0.6 2.0mA 1.5mA 0.4 1.0mA 0.2 0.5mA 0 0 1 2 3 4 5 6 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Collector to emitter voltage VCE (V) Collector current IC (A) Collector current IC (A) hFE -- IC 1200 VCE=2V 400 350 300 250 200 150 100 50 fT -- I E 24 Cob -- VCB Collector output capacitance Cob (pF) VCB=10V Ta=25C f=1MHz IE=0 Ta=25C Forward current transfer ratio hFE 1000 Transition frequency fT (MHz) 20 800 Ta=75C 600 25C -25C 16 12 400 8 200 4 0 0.01 0.03 0.1 0.3 1 3 10 0 -1 0 -2 -3 -5 -10 -20 -30 -50 -100 1 2 3 5 10 20 30 50 100 Collector current IC (A) Emitter current IE (mA) Collector to base voltage VCB (V) 3 Composite Transistors Characteristics charts of Tr2 IC -- VCE -60 Ta=25C -50 IB=-300A -50 -60 VCE= -5V Ta=25C XN04609 IC -- I B -400 -350 IB -- VBE VCE=- 5V Ta=25C Collector current IC (mA) Collector current IC (mA) -250A -40 -200A -30 -40 Base current IB (A) -300 -250 -200 -150 -100 -50 0 -150A -30 -20 -100A -20 -10 -50A -10 0 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 0 0 -100 -200 -300 -400 0 -0.4 -0.8 -1.2 -1.6 Collector to emitter voltage VCE (V) Base current IB (A) Base to emitter voltage VBE (V) IC -- VBE -240 VCE(sat) -- IC -10 hFE -- IC IC/IB=10 600 VCE= -10V Collector to emitter saturation voltage VCE(sat) (V) VCE=-5V -200 25C Ta=75C -160 -25C Forward current transfer ratio hFE -3 -1 -0.3 -0.1 -0.03 -0.01 Ta=75C 25C -25C 500 Collector current IC (mA) 400 Ta=75C 300 25C -25C 200 -120 -80 -40 100 -0.003 -0.001 -1 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 -300 -1000 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT -- IE 160 140 120 100 80 60 40 20 0 0.1 Cob -- VCB 8 6 f=1MHz IE=0 Ta=25C NF -- IE VCB=-5V f=1kHz Rg=2k Ta=25C Collector output capacitance Cob (pF) VCB=-10V Ta=25C Transition frequency fT (MHz) 7 6 5 4 3 2 1 0 -1 5 Noise figure NF (dB) -2 -3 -5 -10 -20-30 -50 -100 4 3 2 1 0.3 1 3 10 30 100 0 0.01 0.03 0.1 0.3 1 3 10 Emitter current IE (mA) Collector to base voltage VCB (V) Emitter current IE (mA) 4 Composite Transistors NF -- IE 20 18 16 VCB=-5V Rg=50k Ta=25C 300 200 hfe 100 100 XN04609 h Parameter -- IE 300 200 hfe h Parameter -- VCE IE=2mA f=270Hz Ta=25C Noise figure NF (dB) 14 12 10 8 6 4 2 0 0.1 1kHz 10kHz 5 3 2 1 0.1 hre (x10-4) 0.2 0.3 0.5 1 2 VCE= -5V f=270Hz Ta=25C 3 5 10 hie (k) 5 3 2 1 -1 hre (x10-4) hie (k) Parameter h f=100Hz 30 20 10 hoe (S) Parameter h 50 50 30 20 hoe (S) 10 0.2 0.3 0.5 1 2 3 5 10 -2 -3 -5 -10 -20 -30 -50 -100 Emitter current IE (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) 5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
Price & Availability of XN04609
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |